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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3223
DESCRIPTION *With TO-3 package *High speed,high current *Low saturation voltage APPLICATIONS *For high current high speed,high power applications PINNING (See Fig.2)
PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 230 230 7 20 7 200 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.62 UNIT /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A At rated voltage At rated voltage At rated voltage IC=20A ; VCE=2V IC=2A ; VCE=10V 10 MIN 230
2SC3223
TYP.
MAX
UNIT V
1.0 1.5 0.1 0.1 0.1
V V mA mA mA
20
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3223
Fig.2 Outline dimensions
3


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